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| 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Symbol Ratings Unit V VDS 500 A ID 12 A ID(puls] 48 V VGS 30 A IAR *2 12 mJ EAS *1 217 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 1.67 W Tc=25C 95 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C < < < < *1 L=2.77mH, Vcc=50V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C < *4VDS=500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V Tch=25C VDS=400V VGS=0V Tch=125C VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 VCC=250V ID=12A VGS=10V L=2.77mH Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.52 Units V V A nA S pF 10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 12 1.00 1.50 0.7 4.5 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.32 75.0 Units C/W C/W 1 2SK3512-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A 300 125 100 250 200 75 EAV [mJ] 0 25 50 75 100 125 150 PD [W] 150 50 100 25 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [ C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 28 26 24 22 20 18 7.5V 10 20V 10V 8V Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VGS=6.5V 7.0V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 1.4 VGS=6.5V 1.2 7.0V 7.5V 1.0 RDS(on) [ ] 10 8V 0.8 10V 20V gfs [S] 0.6 1 0.4 0.2 0.1 0.1 1 10 0.0 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3512-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.4 1.3 1.2 1.1 1.0 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA max. RDS(on) [ ] 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25C 24 22 20 Vcc= 120V 18 300V 16 14 480V 1n 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 C [F] 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 1 VSD [V] ID [A] 3 2SK3512L,S,SJ-01MR FUJI POWER MOSFET 101 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [*Z/W] 10-1 10 -2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t [sec] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=50V 10 2 Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -2 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET Type(L) Type(S) FUJI POWER MOS FET Type(SJ) FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. 4 See Note: 1. Trademark Fig. 1. Fig. 1. See Note: 1. Trademark Trademark Lot No. Lot No. Type name Lot No. Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating CONNECTION Pre-Solder Notes 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4 |
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